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| BMD Analyzer System MO-441 |
| Bulk Micro Defect Analyzer System |
 This product is a system for evaluation of defect density across Si wafers. Narrowly focused laser is beamed into the crystal and light scattered from defective areas is imaged to measure defect density within the crystal. The resultant scatter images are used to automatically output defect density and moving radius distribution and DZ width of defect density.
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Can detect defects inside the wafer without etching
High sensitivity of a few tens of nm
High speed processing at 5 seconds per FOV
900 ×Flex pixel high-sensitivity camera
Optional 3D measurement function
CE Marking
Windows XP software operating environment
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Specimen
・Halved wafers: 6”, 8”, 12”Ф(0.5〜1.5mm thickness)
・Strip-form wafers: 10〜20×50〜100mm |
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Measurement
・FOV: 470μ× 500μー 470μ× 2000μ
・Time: 5sec (exclusive of AF time)
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Installation Conditions
・Power Supply: 100/200V (±5%) 15KAV
・Vacuum Source: -80kPa〜-100kPa
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Options
・Transfer unit (holds 2 cassettes)
・3-D measurement/processing
・Networking function
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